Electrostatic Discharge Protection: Advances and Applications, Edition 2
Учкай маалымат
Electrostatic Discharge Protection: Advances and Applications delivers timely coverage of component- and system-level ESD protection for semiconductor devices and integrated circuits. Bringing together contributions from internationally respected researchers and engineers with expertise in ESD design, optimization, modeling, simulation, and characterization, this book bridges the gap between theory and practice to offer valuable insight into the state of the art of ESD protection.
Amply illustrated with tables, figures, and case studies, the text:
- Instills a deeper understanding of ESD events and ESD protection design principles
- Examines vital processes including Si CMOS, Si BCD, Si SOI, and GaN technologies
- Addresses important aspects pertinent to the modeling and simulation of ESD protection solutions
Electrostatic Discharge Protection: Advances and Applications provides a single source for cutting-edge information vital to the research and development of effective, robust ESD protection solutions for semiconductor devices and integrated circuits.
Автор жөнүндө
Juin J. Liou received his BS (honors), MS, and Ph.D in electrical engineering from the University of Florida, Gainesville, in 1982, 1983, and 1987, respectively. In 1987, he joined the University of Central Florida (UCF), Orlando, where he is now Pegasus distinguished professor, Lockheed Martin St. Laurent professor, and UCF-Analog Devices fellow. Highly decorated and widely published, Dr. Liou holds eight US patents (with five more pending) and several honorary professorships. He is a fellow of IEEE, IET, and Singapore Institute of Manufacturing Technology, and a distinguished lecturer in the IEEE Electron Device Society and National Science Council.
