Flash Lamp Annealing: From Basics to Applications

Lars Rebohle received a Diplom in physics from the Technical University of Dresden in 1995. From 1996 to 2001 he was employed at the Dresden-Rossendorf Research Centre, now Helmholtz-Zentrum Dresden-Rossendorf (HZDR), working on the luminescence properties of ion-implanted, nanocrystalline SiO2 layers. He received his Ph.D. in 1999. After a post-doctoral stay at the Technical University in Vienna in 2002, he worked from 2003 to 2006 in industry dealing with ion implantation, flash lamp annealing and thin film deposition. Since 2007, he has been working as a scientist at the HZDR and engaged in research on Si-based light emitters with rare earth elements. His current research topics include the doping, crystallization and annealing of semiconductor materials and nanostructures in non-thermal equilibrium. From 2010 to 2015 he was guest lecturer at the Technical University Bergakademie Freiberg, where he got his habilitation in 2013.

Slawomir Prucnal received a Diplom in physics from the University of Maria Curie-Sklodowska in Lublin, Poland in 2008. From 2008 he as been employed at the HZDR, working on the optoelectronic properties of ion-implanted semiconductors (group IV and III-V), both on bulk and nanostructures. From 2009 to 2011 he carried out postdoctoral work at the TU Bergakademie Freiberg, Institute for Experimental Physics as part of a Cluster of Excellence project, focused on the development of solar cells. His current research topics include hyperdoped semiconductors (e.g. SiSe), ultra-doped Ge for superconductivity and MID plasmonics, defects and doping engineering in Transparent Conductive Oxides (TCOs).