Strained-Si Heterostructure Field Effect Devices
Jan 2007 · CRC Press
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A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi
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C.K Maiti, S Chattopadhyay, L.K Bera
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