Towards the First Silicon Laser
Lorenzo Pavesi · Sergey Gaponenko · Luca Dal Negro
ዲሴም 2012 · NATO Science Series II: Mathematics, Physics and Chemistry መጽሐፍ 93 · Springer Science & Business Media
ኢ-መጽሐፍ
482
ገጾች
reportየተሰጡት ደረጃዎች እና ግምገማዎች የተረጋገጡ አይደሉም የበለጠ ለመረዳት
ስለዚህ ኢ-መጽሐፍ
Silicon, the leading material in microelectronics during the last four decades, also promises to be the key material in the future. Despite many claims that silicon technology has reached fundamental limits, the performance of silicon microelectronics continues to improve steadily. The same holds for almost all the applications for which Si was considered to be unsuitable. The main exception to this positive trend is the silicon laser, which has not been demonstrated to date. The main reason for this comes from a fundamental limitation related to the indirect nature of the Si band-gap. In the recent past, many different approaches have been taken to achieve this goal: dislocated silicon, extremely pure silicon, silicon nanocrystals, porous silicon, Er doped Si-Ge, SiGe alloys and multiquantum wells, SiGe quantum dots, SiGe quantum cascade structures, shallow impurity centers in silicon and Er doped silicon. All of these are abundantly illustrated in the present book.
ለዚህ ኢ-መጽሐፍ ደረጃ ይስጡ
ምን እንደሚያስቡ ይንገሩን።
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የኮምፒውተርዎን ድር አሳሽ ተጠቅመው በGoogle Play ላይ የተገዙ ኦዲዮ መጽሐፍትን ማዳመጥ ይችላሉ።
ኢሪደሮች እና ሌሎች መሳሪያዎች
እንደ Kobo ኢ-አንባቢዎች ባሉ ኢ-ቀለም መሣሪያዎች ላይ ለማንበብ ፋይል አውርደው ወደ መሣሪያዎ ማስተላለፍ ይኖርብዎታል። ፋይሎቹን ወደሚደገፉ ኢ-አንባቢዎች ለማስተላለፍ ዝርዝር የእገዛ ማዕከል መመሪያዎቹን ይከተሉ።
